Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon
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چکیده
منابع مشابه
Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon
Boron pile-up at the maximum melt depth for laser melt annealing of implanted silicon has been reported in numerous papers. The present contribution examines the boron accumulation in a laser doping setting, without dopants initially incorporated in the silicon wafer. Our numerical simulation models laser-induced melting as well as dopant diffusion, and excellently reproduces the secondary ion ...
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ژورنال
عنوان ژورنال: Materials
سال: 2017
ISSN: 1996-1944
DOI: 10.3390/ma10020189